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Microstructure of nitride semiconductors used in laser diode manufacturing

Microstructure of nitride semiconductors used in laser diode manufacturing
place:new ANKA seminar room, building 348, upper floor
Affiliation:Institute of High Pressure Physics & TopGaN lasers, Warsaw, Poland
Date:10.07.2014
Inviting person:Tilo Baumbach, KIT-ANKA, IPS, LAS
Speaker:Mike Leszczynski
Time:14:00 p.m. (Please mind the unusual time.)

Abstract:

In the first part of my talk I will show a number of future applications of GaN-basde devices: general lighting using laser diodes, laser tv, "Last mile" communication and some others.

Then, I will show problems related to the microstructure of GaN substrates grown by various methods, of AlGaN and InGaN layers. In particular, I will focus on In-segregation in InGaN quantum wells.

The experimental results of HR XRD, TEM, CL will be correlated with the optical properties of the devices.