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Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography
Authors:

D. Allen, J. Wittge, A. Zlotos, E. Gorostegui-Colinas, J. Garagorri, P. J. McNally, A. N. Danilewsky, M. R. Elizalde 

Source:

Nuclear Instruments and Methods in Physics Research B 268 (2010) 383-387 

Date: 2010