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Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC

Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
Authors:

B. Kallinger, B. Thomas, S. Polster, P. Berwian, J. Friedrich 

Source:

Materials Science Forum 645-648 (2010) 299-302 

Date: 2010