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Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography

Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography
Authors:

B. Kallinger, S. Polster, P. Berwian, J. Friedrich, G. Müller, A. N. Danilewsky, A. Wehrhahn, A.-D. Weber 

Source:

Journal of Crystal Growth 314 (2011) 21-29 

Date: 2011