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Doping induced lattice misfit in 4H-SiC homoepitaxy

Doping induced lattice misfit in 4H-SiC homoepitaxy
Authors:

B. Kallinger, P. Berwian, J. Friedrich, G. Müller, A.-D. Weber, E. Volz, G. Trachta, E. Spiecker, B. Thomas 

Source:

Journal of Crystal Growth 349 (2012) 43-49 

Date: 2012