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Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Authors:

B. Kallinger, S. Polster, P. Berwian, J. Friedrich, A. N. Danilewsky 

Source:

J. Appl. Phys. 114, 183507 

Date: 2013