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Lateral ordering, strain, and morphology evolution of InGaAs/GaAs(001) quantum dots due to high temperature postgrowth annealing

Lateral ordering, strain, and morphology evolution of InGaAs/GaAs(001) quantum dots due to high temperature postgrowth annealing
Authors: M. Riotte, E. Fohtung, D. Grigoriev, A. A. Minkevich, T. Slobodskyy, M. Schmidbauer, T. H. Metzger, D. Z. Hu, D. M. Schaadt, T. Baumbach
Source: Applied Physics Letters 96 (2010) 083102-1-3
Date: 2010