Accelerator Test Facility and Synchrotron Radiation Source at KIT

Microstructure of nitride semiconductors used in laser diode manufacturing

  • place:new ANKA seminar room, building 348, upper floor
  • Date:10.07.2014
  • Inviting person:Tilo Baumbach, KIT-ANKA, IPS, LAS
  • Speaker:Mike Leszczynski
  • Time:14:00 p.m. (Please mind the unusual time.)
  • Abstract:

    In the first part of my talk I will show a number of future applications of GaN-basde devices: general lighting using laser diodes, laser tv, "Last mile" communication and some others.

    Then, I will show problems related to the microstructure of GaN substrates grown by various methods, of AlGaN and InGaN layers. In particular, I will focus on In-segregation in InGaN quantum wells.

    The experimental results of HR XRD, TEM, CL will be correlated with the optical properties of the devices.

  • Affiliation:Institute of High Pressure Physics & TopGaN lasers, Warsaw, Poland